INFRARED DETECTORS BASED ON TERNARY SEMICONDUCTOR QUANTUM STRUCTURES
نویسندگان
چکیده
منابع مشابه
Infrared Focal Plain Arrays Based on Semiconductor Quantum Dots
Form Approved OMB No. 0704-0188 Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this colle...
متن کاملResonant metamaterial detectors based on THz quantum-cascade structures
We present the design, fabrication and characterisation of an intersubband detector employing a resonant metamaterial coupling structure. The semiconductor heterostructure relies on a conventional THz quantum-cascade laser design and is operated at zero bias for the detector operation. The same active region can be used to generate or detect light depending on the bias conditions and the vertic...
متن کاملInfrared electroluminescence from metal-oxide-semiconductor structures on silicon
Room temperature electroluminescence from metal-oxide–semiconductor structures on silicon is observed. The thin oxide is grown by rapid thermal oxidation. With the metal negatively biased, luminescence can be observed. The emission is voltage dependent. For an applied voltage below 5 V, the emission occurs around 1150 nm, approximately corresponding to the Si bandgap energy. For a larger applie...
متن کاملFuture of Semiconductor Based Thermal Neutron Detectors
Thermal neutron detectors have seen only incremental improvements over the last decades. In this paper we overview the current technology of choice for thermal neutron detection – He tubes, which suffer from, moderate to poor fieldability, and low absolute efficiency. The need for improved neutron detection is evident due to this technology gap and the fact that neutrons are a highly specific i...
متن کاملIntersubband relaxation dynamics in semiconductor quantum structures
We monitor the temporal evolution of the electron population in the first and second subband of an undoped GaAs/AlGaAs asymmetric double quantum well after interband optical excitation by using an interband pump/intersubband probe technique. The spacing between the two subbands is smaller than the longitudinal optical phonon energy. We extract an intersubband lifetime of T21 = 100 ps and a reco...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Bulletin of Kyiv Polytechnic Institute. Series Instrument Making
سال: 2016
ISSN: 2663-3450,0321-2211
DOI: 10.20535/1970.52(2).2016.92951